Determination of the Hall coefficient of a Germanium doped p

Abstract

The Hall effect is one of the most important methods of experimental research to determine the microscopic coefficients of the transport of charge carriers in semiconductor in equilibrium conditions. Lorentz's powerful force in the mobile charge carriers is equal to the electric power generated by the electric field of Hall. To study the effect of Hall, we developed a semi-conductor sample of Germanuim doped p in a regular magnetic field. When the current of a sample electric current does not correspond to the direction of the magnetic field, the charge carriers deviate due to the effect of Lorentz force. This causes a quantum difference to be formed vertically in the direction of the magnetic field and current, where H H IB V R d